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600 V power Schottky silicon carbide diode

600 V power Schottky silicon carbide diode Author STMICROELECTRONICS Subject - Keywords Technical Literature, 16283, Product Development, Specifiion, Datasheet, STPSC406 Created Date 20051020104730Z

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600 V power Schottky silicon carbide diode

Septeer 2009 Doc ID 16284 Rev 1 1/8 8 STPSC606 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedied to PFC boost diode Description The SiC diode is an

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600 V power Schottky silicon carbide diode

Septeer 2009 Doc ID 16286 Rev 1 1/7 7 STPSC806 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC

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600 V power Schottky silicon carbide diode

It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal

600 V power Schottky silicon carbide diode

March 2011 Doc ID 018506 Rev 1 1/7 7 STPSC2006CW 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The

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600 V power Schottky silicon carbide diode

600 V power Schottky silicon carbide diode Author STMICROELECTRONICS Subject - Keywords Technical Literature, 16288, Product Development, Specifiion, Datasheet, STPSC1206 Created Date 20051020104730Z