[Francesco La Via, et al, Journal of Materials Research, vol28, p94, 2013]. The texturing resulted in stacking faults coining (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11
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Abstract Optical spectroscopy in the visible (300–1100 nm) and in the infrared (400–4000cm−1) regions was used to monitor the relaxation and crystallization processes of pure amorphous silicon carb P. Musumeci Dipartimento di Fisica , Corso Italia 57, ania , Italy ; Istituto Nazionale de Fisica per la Materia , Corso Italia 57, ania , Italy , R. Reitano Dipartimento di Fisica
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and Francesco La Via 2,g 1 ST -Microelectronics, Stradale Primosole, 50, 95100 ania, Italy. 2 Fundamentals of Silicon Carbide Technology JohnWiley & Sons Singapore Pte. Ltd (2014) pp 50. 538 Silicon Carbide and Related Materials 2017 Title Author
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doping of graphene on silicon carbide Filippo Giannazzo CNR-IMM, Strada VIII, 5 95121 ania, Italy E-mail: ﬁ[email protected] cnr Abstract Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide
This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulfide (WS2) on epitaxial graphene (EG) on SiC(0001). The WS2 is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron
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SiCILIA - Silicon Carbide detectors for nuclear physics and Appliions Salvatore Tudisco*, Francesco La Via# On behalf of SiCilia project * INFN-LNS, Via S. Sofia 62, 95129, ania, Italy# CNR-IMM, Strada VIII 5, 95121 ania, Italy E-mail: [email protected]
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Dipartimento di Chimica Applia e Scienza dei Materiali, Università di Bologna, 40136 Bologna, Italy Consorzio Interuniversitario Nazionale per la Scienza e la Tecnologia dei Materiali, Unità di Padova, 35131 Padova, Italy Meer, American Ceramic Society.
Dissertation - Oxidation Behavior of Zirconium Diboride Silicon Carbide Based Materials at Ultra-High Temperatures Ph.D. - Materials Science and Engineering - University of ia 2014 M.S. - Engineering Physics - University of ia 2010
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In spite of its great promise for energy‐efficient power conversion, the electronic quality of cubic silicon carbide (3C‐SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the
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of fine-grained silicon carbide NEWS Apr 10 MECSPE 2020 POSTPONED Due to current Coronavirus Covid-19 emergency situation in Northern Italy, Mecspe 2020 edition has been postponed. The exhibition will take place in Parma from 29th to 31st October 2020.A causa della attuale situazione di emergenza in Nord Italia dovuta alla diffusione del Coronavirus Covid-19, la manifestazione Mecspe 2020 è
La Societa'' Keramo viene fondata nel 1972 dalla volonta'' del Sig. Giovanni Interdonato. L’elemento che sin dall’inizio contraddistingue la filosofi Show All Articles Aluminium Oxide Zirconium Oxide Silicon Carbide Silicon Nitride Steatite, Cordierite, Magnesium
La sua stabilità chimica è veramente notevole. 2. Il nostro prodotto si applica in maniera estensiva a metalli non ferrosi, forni, industria petrolchimica e altre ancora. Indice tecnico Parametro Indice Porosità apparente, % ≤15 Densità bulk, g/cm 3 ≥2.7 ≥180