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First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide Jaeger, Richard C ⋅ Chen, Jun ⋅ Suhling, Jeffrey C and Fursin, Leonid IEEE Sensors Journal, vol. 19, (no. 15), pp. 6045, 2019-Aug.1,-1. | Journal Article

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Hydrogen Storage in Silicon Carbide Nanotubes by Lithium Doping. The Journal of Physical Chemistry C 2011, 115 (8) , 3491-3496. DOI: 10.1021/jp106509g. Rachel B. Getman, Jacob H. Miller, Kenneth Wang, and Randall

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