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The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 C mainly from

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Silicon carbide (SiC) nanoparticles exhibit characteristics like high thermal conductivity, high stability, high purity, good wear resistance and a small thermal expansion co-efficient. These particles are also resistant to oxidation at high temperatures.

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Silicon carbide has been the most widely used material for the use of structural ceramics. Characteristics of SiC can be listed such as relatively low thermal expansion, high force-to-weight radius, high thermal conductivity, hardness, resistance to abrasion and corrosion, and most importantly, the maintenance of elastic resistance at temperatures up to 1650 ° C, have led to a wide range of uses.

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The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa.

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2012/7/1· Silicon carbide nano powders have been synthesized from carbothermic reduction of nanosilica with graphite in a 2.45 GHz microwave field in nitrogen atmosphere after 40 h milling. At 1150 °C, the synthesis of SiC is started but it is not completed even with increasing duration time.

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Silicon Si powder CAS 7440-21-3 Tin Sn Powder CAS 7440-31-5 Titanium Ti Powder CAS 7440-32-Manganese Mn powder CAS 7439-96 Boride powder Niobium boride powder NbB cas 1 Chromium Diboride powder CrB2 c Molybdenum boride powder MoB2 c

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2012/12/1· Green blended compounds made of SiC nano-sized powder, a fugitive binder and a sintering agent (boron carbide, B 4 C), have been prepared. The binder is removed at low temperature ( e.g. 800 °C) and the pressureless sintering studied between 1900 and 2100 °C.