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600 V tandem extra fast diode - STMicroelectronics

diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio. The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints. Featuring ST''s Turbo 2 600 V

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UV LED Products Archives - Boston Electronics

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Carbon nanotube is the form of carbon element that show spectacular electrical and optical properties. They are in the form of thin empty cylinders. Elastic modulus of carbon nanotubes is nearly 1 TPa (it is known that elastic modulus of diamond is 1,2 TPa). It has

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X-FAB: Home

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GaN Basics: FAQs | Power Electronics

And, the body diode forward drop can be a volt higher than comparable silicon MOSFETs. Because the total Miller charge (QGD) is much lower for an eGaN FET than for a similar on-resistance power MOSFET, it is possible to turn on the device much faster.

150mm Alive and Kicking | Applied Materials

SILICON CARBIDE APPLIIONS ESCALATING The second prominent area for 150mm wafer technologies is in the development of SiC power MOSFETs (figure 2). Today these devices are used mostly for high-power switching in industrial appliions, but increasingly they’re also being used in the growing nuer of electric vehicles (EVs) that have begun to populate the highways.

REC Silicon ASA - REC Silicon

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Microsemi Corporation | Semiconductors Distributor

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Markets | II-VI Incorporated

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